GaN high electron mobility transistors with AlInN back barriers

作者：Xin He, Desheng Zhao, Desheng Jiang, Jianfeng Zhu, Ping Chen, Z.S. Liu, L. C. Le, Jie Yang, X.J. Li, J.P. Liu, Liqun Zhang, Hang Yang · 发表于：Journal of Alloys and Compounds · 年份：2015 · DOI：10.1016/j.jallcom.2015.12.031 · 被引用次数：35 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Ga2O3 and related materials