Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies

作者：H.L. Hughes, P. J. McMarr, Michael L. Alles, En Xia Zhang, Charles N. Arutt, B. Doris, Derrick Liu, Richard G. Southwick, P. Oldiges · 年份：2015 · DOI：10.1109/redw.2015.7336740 · 被引用次数：54 · 研究领域：Radiation Effects in Electronics、Semiconductor materials and devices、Integrated Circuits and Semiconductor Failure Analysis

14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.