The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

作者：Hoang‐Phuong Phan, Dzung Viet Dao, Koichi Nakamura, Sima Dimitrijev, Nam‐Trung Nguyen · 发表于：Journal of Microelectromechanical Systems · 年份：2015 · DOI：10.1109/jmems.2015.2470132 · 被引用次数：253 · 研究领域：Advanced MEMS and NEMS Technologies、Acoustic Wave Resonator Technologies、Nanowire Synthesis and Applications

Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. This paper reviews the piezoresistive effect of SiC for mechanical sensors used at elevated temperatures. We present experimental results of the gauge factors obtained for various poly-types of SiC films and SiC nanowires, the related theoretical analysis, and an overview on the development of SiC piezoresistive transducers. The review also discusses the current issues and the potential applications of the piezoresistive effect in SiC.