High Q microwave inductors on siliconby surface tension self-assembly

作者：Gerald W. Dahlmann, Eric M. Yeatman · 发表于：Electronics Letters · 年份：2000 · DOI：10.1049/el:20001190 · 被引用次数：39 · 研究领域：Microwave Engineering and Waveguides、Advanced MEMS and NEMS Technologies、Advanced Antenna and Metasurface Technologies

A new technique is presented for the fabrication of three-dimensional metal structures by surface tension-induced folding of flat structures. This fully parallel, low temperature method is suitable for post-processing on integrated circuits, and in a first application is used to decouple inductors for radio- and microwave-frequency integrated circuits from their substrates, to reduce losses and parasitic capacitance. Meandered microwave inductors have been fabricated on a low resistivity silicon substrate, and a peak Q of 10 was measured, at 1 GHz, for a 2 nH inductor standing vertically, compared to a peak Q of 4 for the same structure before self assembly.