A Continuous, Analytic Drain-Current Model for DG MOSFETs

作者：Y. Taur, Xiaoping Liang, Wei Wang, Huiling Lü · 发表于：IEEE Electron Device Letters · 年份：2004 · DOI：10.1109/led.2003.822661 · 被引用次数：394 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices

This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I/sub ds/(V/sub g/,V/sub ds/) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.