Tunneling Field-Effect Transistor: Capacitance Components and Modeling

作者：Yue Yang, Xin Tong, Li-Tao Yang, Pengfei Guo, Lu Fan, Yee‐Chia Yeo · 发表于：IEEE Electron Device Letters · 年份：2010 · DOI：10.1109/led.2010.2047240 · 被引用次数：247 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Silicon Carbide Semiconductor Technologies

We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gate-drain capacitance Cgdon drain design and gate length was further investigated for reduction of switching delay in TFETs.