Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

作者：Ling Sang, Qin Sheng Zhu, Shao Yan Yang, Gui Peng Liu, Huijie Li, Hong Yuan Wei, Chun Mei Jiao, Shu Man Liu, Zhan Guo Wang, Xiao Zhou, Wei Mao, Yue Hao, Bo Shen · 发表于：Nanoscale Research Letters · 年份：2014 · DOI：10.1186/1556-276x-9-470 · 被引用次数：16 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Acoustic Wave Resonator Technologies

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.