A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology

作者：Kitae Park, Oh-Suk Kwon, Sang-Yong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Minseok Kim, Yoon-Hee Choi, Seung Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Changgyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Junhee Lee, Jong‐Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keonsoo Kim, Sungsoo Lee, Young-Ho Lim, Tae‐Sung Jung · 年份：2011 · DOI：10.1109/isscc.2011.5746287 · 被引用次数：32 · 研究领域：Advanced Data Storage Technologies、Cellular Automata and Applications、Advanced Wireless Communication Techniques

Recently, the demand for 3b/cell NAND flash has been increasing due to a strong market shift from 2b/cell to 3b/cell in NAND flash applications, such as USB disk drives, memory cards, MP3 players and digital still cameras that require cost-effective flash memory. To further expand the 3b/cell market, high write and read performances are essential [1]. Moreover, the device reliability requirements for these applications is a challenge due to continuing NAND scaling to sub-30nm pitches that increases cell-to-cell interference and disturbance. We present a high reliability 64Gb 3b/cell NAND flash with 7MB/s write rate and 200Mb/s asynchronous DDR interface in a 20m-node technology that helps to meet the expanding market demand and application requirement.