Tuning from Thermionic Emission to Ohmic Tunnel Contacts via Doping in Schottky-Barrier Nanotube Transistors

作者：Yung‐Fu Chen, Michael S. Fuhrer · 发表于：Nano Letters · 年份：2006 · DOI：10.1021/nl061379b · 被引用次数：65 · 研究领域：Carbon Nanotubes in Composites、Graphene research and applications、Thermal Radiation and Cooling Technologies

Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.