Monitoring hot-electron-induced degradation of floating-body SOI MOSFETs

作者：J.-Y. Choi, R. Sundaresan, J.G. Fossum · 发表于：IEEE Electron Device Letters · 年份：1990 · DOI：10.1109/55.61778 · 被引用次数：5 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Ferroelectric and Negative Capacitance Devices

A simple model relating the hot-electron-controlled device lifetime of floating-body SOI MOSFETs to the body voltage is discussed. The model is derived from the familiar relationship between the device lifetime and the substrate current of bulk MOSFETs, a relationship that cannot be measured directly in floating-body MOSFETs. The model, which allows quick estimation of the device lifetime from body-voltage measurements, is supported by measurements of hot-electron-induced degradation of floating-body SOI MOSFETs fabricated using SIMOX substrates.>