Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm

作者：Leonardo Gomez, Iris Berg, Judy L. Hoyt · 发表于：IEEE Electron Device Letters · 年份：2007 · DOI：10.1109/led.2007.891795 · 被引用次数：59 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Integrated Circuits and Semiconductor Failure Analysis

The electron effective mobility in ultrathin-body n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross-sectional transmission electron microscopy. Devices with body thicknesses ranging from 2 to 25 nm are studied. Significant mobility enhancements ( ~1.8x) compared to unstrained SOI are observed for 30% SSDOI with body thicknesses of above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm