CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

作者：Sung Hyun Jo, Wei Lü · 发表于：Nano Letters · 年份：2008 · DOI：10.1021/nl073225h · 被引用次数：409 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices

We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), long endurance (10(6)), retention time (5 months), and multibit capability. These key performance metrics compare favorably with other emerging nonvolatile memory techniques. Furthermore, both diode-like (rectifying) and resistor-like (nonrectifying) behaviors can be obtained in the device switching characteristics in a controlled fashion. These results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.