An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

作者：Hongwei Tan, Gang Liu, Xiaojian Zhu, Huali Yang, Bin Chen, Xinxin Chen, Jie Shang, Wei Lü, Yihong Wu, Run‐Wei Li · 发表于：Advanced Materials · 年份：2015 · DOI：10.1002/adma.201500039 · 被引用次数：233 · 研究领域：Advanced Memory and Neural Computing、Semiconductor materials and devices、Transition Metal Oxide Nanomaterials

A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.