InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor deposition

作者：Donghai Wu, E. Kaas, J. Diaz, Brandon M. Lane, Adam Rybaltowski, Hongyuan Yi, Manijeh Razeghi · 发表于：IEEE Photonics Technology Letters · 年份：1997 · DOI：10.1109/68.553081 · 被引用次数：29 · 研究领域：Semiconductor Quantum Structures and Devices、Advanced Semiconductor Detectors and Materials、Semiconductor Lasers and Optical Devices

InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-μm cavity length and 100-μm-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm2, low internal loss of 3.0 cm/sup -1/, far-field /spl theta//sub /spl perp// of 34/spl deg/ with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.