Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

作者：Michael R. Krames, O.B. Shchekin, Regina Mueller‐Mach, Gerd Mueller, Ling Zhou, Gerard Harbers, M. G. Craford · 发表于：Journal of Display Technology · 年份：2007 · DOI：10.1109/jdt.2007.895339 · 被引用次数：1937 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Photocathodes and Microchannel Plates

Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2white at 1 A forward current in 1times1 mm2chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs