Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics

作者：Biaolin Peng, Qi Zhang, Xing Li, Tieyu Sun, Huiqing Fan, Shanming Ke, Mao Ye, Yu Wang, Wei Lü, Hanben Niu, James F. Scott, Xierong Zeng, Haitao Huang · 发表于：Advanced Electronic Materials · 年份：2015 · DOI：10.1002/aelm.201500052 · 被引用次数：243 · 研究领域：Ferroelectric and Piezoelectric Materials、Dielectric materials and actuators、Multiferroics and related materials

Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm−3, three times the highest value of lead‐based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue‐free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead‐free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead‐free relaxor thin films may make a great impact on the modern energy storage technology.