Accurate on-wafer power and harmonic measurements of MM-wave amplifiers and devices

作者：Brian Hughes, Alessandro Ferrero, A. Cognata · 年份：2003 · DOI：10.1109/mwsym.1992.188164 · 被引用次数：53 · 研究领域：Microwave and Dielectric Measurement Techniques、Radio Frequency Integrated Circuit Design、Advanced Power Amplifier Design

A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GHz.>