Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

作者：Guannan Wei, Yung C. Liang, Ganesh S. Samudra · 年份：2011 · DOI：10.1109/icpe.2011.5944472 · 被引用次数：5 · 研究领域：Silicon Carbide Semiconductor Technologies、GaN-based semiconductor devices and materials、Plasma Diagnostics and Applications

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC/GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.