Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

作者：Kyoung Jin Choi, Michael D. Biegalski, Yulan Li, Alok Sharan, Jürgen Schubert, R. Uecker, P. Reiche, Y. B. Chen, Xiaoqing Q. Pan, Venkatraman Gopalan, Long‐Qing Chen, Darrell G. Schlom, Chang‐Beom Eom · 发表于：Science · 年份：2004 · DOI：10.1126/science.1103218 · 被引用次数：1971 · 研究领域：Ferroelectric and Piezoelectric Materials、Electronic and Structural Properties of Oxides、Acoustic Wave Resonator Technologies

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.