1/f noise sources

作者：F.N. Hooge · 发表于：IEEE Transactions on Electron Devices · 年份：1994 · DOI：10.1109/16.333808 · 被引用次数：1010 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Analog and Mixed-Signal Circuit Design、Low-power high-performance VLSI design

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/. Damaging the crystal has a strong influence on /spl alpha/, /spl alpha/ may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The /spl alpha/ values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices.>