MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

作者：Yee‐Chia Yeo, Tsu-Jae King, Chenming Hu · 发表于：IEEE Transactions on Electron Devices · 年份：2003 · DOI：10.1109/ted.2003.812504 · 被引用次数：235 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Ferroelectric and Negative Capacitance Devices

In this paper, we explore the scaling limits of alternative gate dielectrics based on their direct-tunneling characteristics and gate-leakage requirements for future CMOS technology generations. Important material parameters such as the tunneling effective mass are extracted from the direct-tunneling characteristics of several promising high-/spl kappa/ gate dielectrics for the first time. We also introduce a figure-of-merit for comparing the relative advantages of various gate dielectrics based on the gate-leakage current. Using an accurate direct-tunneling gate-current model and specifications from the International Technology Roadmap for Semiconductors (ITRS), we provide guidelines for the selection of gate dielectrics to satisfy the projected off-state leakage current requirements of future high-performance and low-power technologies.