Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon

作者：Li Gao, Robyn L. Woo, Baolai Liang, M. Pozuelo, Sergey V. Prikhodko, M.D. Jackson, Niti Goel, Mantu K. Hudait, Diana L. Huffaker, Mark S. Goorsky, Suneel Kodambaka, Robert F. Hicks · 发表于：Nano Letters · 年份：2009 · DOI：10.1021/nl803567v · 被引用次数：72 · 研究领域：Nanowire Synthesis and Applications、ZnO doping and properties、Semiconductor materials and interfaces

Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to catalyze deposition. For growth at 350 degrees C, about 70% of the wires were vertical, while the remaining ones were distributed in the 3 other <111> directions. The vertical fraction, growth rate, and tapering of the wires increased with temperature and V/III ratio. At 370 degrees C and V/III equal to 200, 100% of the wires were vertical with a density of approximately 1.0 x 10(9) cm(-2) and average dimensions of 3.9 mum in length, 45 nm in base width, and 15 nm in tip width. X-ray diffraction and transmission electron microscopy revealed that the wires were single-crystal zinc blende, although they contained a high density of rotational twins perpendicular to the <111> growth direction. The room temperature photoluminescence spectrum exhibited one peak centered at 912 +/- 10 nm with a FWHM of approximately 60 nm.