100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor

作者：Uma Bhattacharya, M.J. Mondry, G. Hurtz, James Guthrie, M.J.W. Rodwell, Taishan Liu, C. Nguyen, D.B. Rensch · 年份：2002 · DOI：10.1109/iciprm.1996.491956 · 被引用次数：2 · 研究领域：Radio Frequency Integrated Circuit Design、Photonic and Optical Devices、Semiconductor Quantum Structures and Devices

We report greatly improved transferred-substrate Schottky collector HBTs with f/sub max/ of 100 GHz and f/sub /spl tau// of 55 GHz. Optimized devices should obtain f/sub max/ in excess of 500 GHz.