Straight and Smooth GaN Nanowires

作者：X. Chen, Jing Li, Yuqing Cao, Y. Lan, H. Li, Meng He, Cheng Wang, Z. Zhang, Z.Y. Qiao · 发表于：Advanced Materials · 年份：2000 · DOI：10.1002/1521-4095(200010)12:19<1432::aid-adma1432>3.0.co;2-x · 被引用次数：196 · 研究领域：GaN-based semiconductor devices and materials、Acoustic Wave Resonator Technologies、Ga2O3 and related materials

Long, straight gallium nitride nanowires, such as those shown in the Figure, are reported to have been grown directly on substrates, without templates, from the reaction of ammonium with metal gallium. Nanoparticle catalysts and directed flow of the carrier gas are shown to be the main factors leading to the quasi-1D growth. GaN nanowires can be used to improve the performance of certain optoelectronic devices.