Controlling the growth interface shape in the growth of CdTe single crystals by the traveling heater method

作者：S. Dost, Yongcai Liu · 发表于：Comptes Rendus Mécanique · 年份：2007 · DOI：10.1016/j.crme.2007.05.011 · 被引用次数：21 · 研究领域：Solidification and crystal growth phenomena、Crystallization and Solubility Studies、High Temperature Alloys and Creep

This article presents the results of a numerical simulation study carried out for controlling the growth interface shape in the THM (Traveling Heater Method) growth of CdTe single crystals. Applying different thermal boundary conditions and a crucible rotation, the optimum growth conditions for a desired interface shape were obtained. The simulation results show that by controlling the heat removal at the bottom of the crucible, a flatter (or slightly concave towards the crystal) growth interface can be maintained throughout the growth process. A crucible rotation rate of 5 rpm seems optimal for a favorable growth interface shape.