Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics

作者：Cory D. Cress, Julian J. McMorrow, Jeremy T. Robinson, Adam L. Friedman, H.L. Hughes, B. D. Weaver, Brian J. Landi · 发表于：MRS Communications · 年份：2011 · DOI：10.1557/mrc.2011.10 · 被引用次数：37 · 研究领域：Carbon Nanotubes in Composites、Semiconductor materials and devices、Radiation Effects in Electronics