Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

作者：Asen Asenov, Savaş Kaya, A. R. Brown · 发表于：IEEE Transactions on Electron Devices · 年份：2003 · DOI：10.1109/ted.2003.813457 · 被引用次数：593 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Electrostatic Discharge in Electronics

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation experiments, we investigate the impact of the rms amplitude /spl Delta/ and the correlation length /spl Lambda/ on the intrinsic parameter fluctuations in well scaled, but simple devices with fixed geometry as well as the channel length and width dependence of the fluctuations at fixed LER parameters. For the first time, we superimpose in the simulations LER and random discrete dopants and investigate their relative contribution to the intrinsic parameter fluctuations in the investigated devices. For particular MOSFET geometries, we were able to identify the regions where each of these two sources of intrinsic parameter fluctuations dominates.