Development of a high voltage intelligent power module (HVIPM)

作者：T. Tanaka, Tetsuo Mizoshiri, E. Suekawa, I. Umesaki, Yoshimasa Kawaguchi, John F. Donlon · 年份：2003 · DOI：10.1109/pesc.2003.1218162 · 被引用次数：6 · 研究领域：Advanced DC-DC Converters、Silicon Carbide Semiconductor Technologies、Induction Heating and Inverter Technology

A high voltage intelligent power module (HVIPM) rated at 600 A, 6.5 kV has been developed using an optimized punch through IGBT chip, coordinated free-wheel diode, high quality manufacturing processes, and high performance gate control technology.