Structural properties of the multilayer graphene/ 4H−SiC(0001¯) system as determined by surface x-ray diffraction

作者：Joanna Hass, Rui Feng, J. E. Millán-Otoya, X. Li, Michael Sprinkle, Phillip N. First, Walter A. de Heer, E. H. Conrad, C. Berger · 发表于：Physical Review B · 年份：2007 · DOI：10.1103/physrevb.75.214109 · 被引用次数：181 · 研究领域：Graphene research and applications、Advancements in Battery Materials、Surface and Thin Film Phenomena

We present a structural analysis of the multilayer graphene/$4H\mathrm{Si}\mathrm{C}(000\overline{1})$ system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated $(000\overline{1})$ surface have a graphene-substrate bond length that is very short $(1.62\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}})$. The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].