Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

作者：Jr‐Hau He, Pei-Hsin Chang, C Y Chen, Kun-Yu Tsai · 发表于：Nanotechnology · 年份：2009 · DOI：10.1088/0957-4484/20/13/135701 · 被引用次数：89 · 研究领域：ZnO doping and properties、Gas Sensing Nanomaterials and Sensors、Copper-based nanomaterials and applications

We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as approximately 10(8) have been fabricated and characterized.