InGaAs–InP Photodiodes With High Responsivity and High Saturation Power

作者：Xin Wang, Ning Duan, H. Chen, Joe C. Campbell · 发表于：IEEE Photonics Technology Letters · 年份：2007 · DOI：10.1109/lpt.2007.902274 · 被引用次数：116 · 研究领域：Photonic and Optical Devices、Advanced Photonic Communication Systems、Semiconductor Lasers and Optical Devices

InGaAs-InP modified charge compensated uni- traveling carrier photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz bandwidth and 25-dBm RF output power and a 20-mum-diameter photodiode exhibited 30-GHz bandwidth and 15.5-dBm RF output power. The saturation current-bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.