A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal

作者：Nderitu Kanyogoro, S. Büchner, Dale McMorrow, H.L. Hughes, Michael S. Liu, A. Hurst, Charles Carpasso · 发表于：IEEE Transactions on Nuclear Science · 年份：2010 · DOI：10.1109/tns.2010.2085450 · 被引用次数：24 · 研究领域：Integrated Circuits and Semiconductor Failure Analysis、Radiation Effects in Electronics、VLSI and Analog Circuit Testing

A novel methodology for completely removing the silicon substrate of SOI devices for single-event effects testing is introduced and demonstrated using a 90 nm, 4 Mb SRAM test vehicle. Applications and significance are discussed.