Compensation ratio-dependent concentration of a VInH4 complex in n -type liquid encapsulated Czochralski InP

作者：S. Fung, Yuchao Zhao, C. D. Beling, Xin Xu, Ming Gong, Ning Sun, Tong Sun, X. D. Chen, Ruan Zhang, S. L. Liu, Guangbing Yang, J. J. Qian, Mingyang Sun, X. L. Liu · 发表于：Applied Physics Letters · 年份：1998 · DOI：10.1063/1.122270 · 被引用次数：15 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor materials and interfaces、Advancements in Semiconductor Devices and Circuit Design

The concentration of hydrogen–indium vacancy complex VInH4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The VInH4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼1016 cm−3 in as-grown liquid encapsulated Czochralski InP. The concentration of the VInH4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects.