Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz

作者：Stefano Tirelli, Diego Marti, Haifeng Sun, Andreas R. Alt, J.‐F. Carlin, N. Grandjean, C. R. Bolognesi · 发表于：IEEE Electron Device Letters · 年份：2011 · DOI：10.1109/led.2011.2162087 · 被引用次数：77 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Radio Frequency Integrated Circuit Design

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequenciesfTandfMAXsimultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5VDSfMAXreaches a maximum value offMAX= 230 GHz atVDS= 6 V. This is the first realization of fully passivated AlInN/GaN HEMTs withfT/fMAX≥ 205 GHz, a performance enabled by the careful shaping of the gate electrode profile and the use of a thin 60-nm SiN encapsulation film.