Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate

作者：C.F. Shen, S.J. Chang, W.S. Chen, T.K. Ko, C. T. Kuo, Shih‐Chang Shei · 发表于：IEEE Photonics Technology Letters · 年份：2007 · DOI：10.1109/lpt.2007.896574 · 被引用次数：78 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Semiconductor Quantum Structures and Devices

A nitride-based high-power flip-chip (FC) light-emitting diode (LED) with a double-side patterned sapphire substrate (PSS) was proposed and realized. Under 350-mA current injection, it was found that forward voltages were 3.24, 3.26, and 3.25 V for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. It was found that the 350-mA LED output powers were 79.3, 98.1, and 121.5 mW for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. In other words, we can enhance the electroluminescence intensity by 53% without increasing operation voltage of the fabricated LED