Deep-level transient charge spectroscopy of Sn donors in Al x Ga1− x As

作者：B. M. Arora, S. Chakravarty, S. Subramanian, V. I. Polyakov, M.G. Ermakov, O.N. Ermakova, P.I. Perov · 发表于：Journal of Applied Physics · 年份：1993 · DOI：10.1063/1.353189 · 被引用次数：30 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design

Deep-level transient charge spectroscopy (QDLTS) measurement is described. The technique is used to investigate energy levels of tin in AlxG1−xAs. The QLDTS spectra have multiple peaks which show the multilevel nature of the tin donors.