Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template

作者：Tomohiro Shimizu, Fumihiro Inoue, Chonge Wang, Shintaro Otsuka, Yoshihiro Tada, Makoto Koto, Shoso Shingubara · 发表于：Japanese Journal of Applied Physics · 年份：2013 · DOI：10.7567/jjap.52.06gf06 · 被引用次数：3 · 研究领域：Nanowire Synthesis and Applications、Anodic Oxide Films and Nanostructures、Semiconductor materials and devices

The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor–liquid–solid (VLS) growth technique and the use of an anodic aluminum oxide (AAO) template on a single-crystal Si substrate. The [100], [110], and [111] nanowires were selectively obtained by choosing the Si substrate with appropriate crystal orientation. The diameter of a Si nanowire in the AAO template could be controlled by the modification of the pore size of the AAO template with anodic voltage during anodization.