InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

作者：David Lackner, Michael F. Steger, Mike L. W. Thewalt, Oliver J. Pitts, Y. T. Cherng, Simon P Watkins, Elena A. Plis, Sanjay Krishna · 发表于：Journal of Applied Physics · 年份：2012 · DOI：10.1063/1.3681328 · 被引用次数：63 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Machine Learning in Materials Science

InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally, the initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector with a 40 nm period are shown. Its cutoff wavelength is 0.15 eV (8.5 μm), in good agreement with the predicted type II transition energy of 0.17 eV.