A diode side-pumped KTiOAsO_4 Raman laser

作者：Zhaojun Liu, Qingpu Wang, Xingyu Zhang, Sasa Zhang, Jun Chang, Zhenhua Cong, Wenjia Sun, Guofan Jin, Xutang Tao, Youxuan Sun, Shaojun Zhang · 发表于：Optics Express · 年份：2009 · DOI：10.1364/oe.17.006968 · 被引用次数：22 · 研究领域：Solid State Laser Technologies、Laser Design and Applications、Advanced Fiber Laser Technologies

A KTiOAsO(4) Raman laser is realized within a diode side-pumped acousto-optically Q-switched Nd:YAG laser. Efficient nanosecond first-Stokes generations at 1091.4 nm are obtained with three 30-mm-long KTA crystals. Under an incident diode power of 60.9 W and a pulse repetition rate of 4 kHz, a first-Stokes power of 4.55 W is obtained, corresponding to a diode-to-Stokes conversion efficiency of 7.5%. The single pulse energy is up to 1.14 mJ and the peak power is 18.0 kW.