Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

作者：Jian Ren, Dawei Yan, Guofeng Yang, Fuxue Wang, Shaoqing Xiao, Xiaofeng Gu · 发表于：Journal of Applied Physics · 年份：2015 · DOI：10.1063/1.4917566 · 被引用次数：20 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and interfaces、Nanowire Synthesis and Applications

Lattice-matched Pt/Au-In0.17Al0.83N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.