Enhancement of domain inversion in LiTaO 3 using heat treatment with metal-oxide mask

作者：Shubin Yi, Soon Young Shin · 发表于：Electronics Letters · 年份：1995 · DOI：10.1049/el:19950859 · 被引用次数：1 · 研究领域：Photorefractive and Nonlinear Optics、Semiconductor materials and devices、Ferroelectric and Piezoelectric Materials

The domain inversion depth is enhanced in proton-exchanged LiTaO3 using heat treatment with a metal-oxide mask. Since this method can lower the proton exchange rate to get the same domain inversion depth, the degradation of the crystal quality in the domain-inverted layer will be reduced.