Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure

作者：J. M. Besson, E. H. Mokhtari, J. González, Gilbert Weill · 发表于：Physical Review Letters · 年份：1987 · DOI：10.1103/physrevlett.59.473 · 被引用次数：192 · 研究领域：Diamond and Carbon-based Materials Research、Boron and Carbon Nanomaterials Research、High-pressure geophysics and materials

Microcrystalline samples of BC8 silicon III and hexagonal silicon IV, grown under high pressure in the diamond anvil cell, remain metastable at ambient pressure. Hall-effect and low-temperature resistivity measurements show Si III to be a hole semimetal with p\ensuremath{\approxeq}5\ifmmode\times\else\texttimes\fi{}${10}^{20}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$. Photoconductivity data show that Si IV, like Si I, is an intermediate-gap semiconductor. The observed behavior confirms theoretical predictions on these two new elemental materials.