Research on some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

作者：Qun Feng Yang, Jian Zheng, Jun Qing Wang, Jun Lin, Xue Nan Zhao, Gaofeng Zheng · 发表于：Applied Mechanics and Materials · 年份：2015 · DOI：10.4028/www.scientific.net/amm.742.773 · 研究领域：Advanced MEMS and NEMS Technologies、Acoustic Wave Resonator Technologies、Advanced Surface Polishing Techniques

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiN x ) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiN x films, and the scanning electron microscope (SEM) was used to test the section morphology of the SiN x thin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiN x thin films with low stress can be fabricated through PECVD, in which the surface roughness values( Ra ) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiN x thin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.