Geometric factors in f.c.c. and b.c.c. metal-on-metal epitaxy. Part I. Deposits of Cu and Ni on (001) Ag

作者：Linda A. Bruce, Hans Jaeger · 发表于：Philosophical magazine · 年份：1977 · DOI：10.1080/14786437708238520 · 被引用次数：60 · 研究领域：nanoparticles nucleation surface interactions、Surface and Thin Film Phenomena、Metallurgical and Alloy Processes

Electron microscopy has been used to examine films of Cu and Ni (mean thickness, t m ⩽ 100nm) vacuum-deposited (1 × 10−7−5 × 10−4 N m−2) at substrate temperatures, T S, in the range 93 K-700 K onto (001) Ag films. The results show that under certain conditions it is possible to prepare a metal deposit with a crystal and/or defect structure not usually observed for this metal. Thus Ni films were a mixture of f.c.c. and h.c.p. material at T S < 525 K and Cu films were b.c.c. if t m< 10 nm at T S ≈ 300 K. Films of b.c.c. Cu were (001) epi-taxed, i.e. (001) Cu ‖ (001) Ag with, say, [110] Cu ‖ [100] Ag. Continuous films of f.c.c. Cu were (001) epitaxed single crystals at T S > 600 K, i.e. they were oriented (001) Cu ‖ (001) Ag with, say, [110] Cu ‖ [110] Ag. At T S ≈ 600 K the films also contained a few (110) epitaxed grains. The latter were oriented (110) Cu ‖ (001) Ag and occurred in two domains aligned with, say, [111] Cu parallel to either [100] Ag or [010] Ag. The (110) grains contained high concentrations of thin twins exclusively parallel to (111) Cu. At T S ≈ 300 K, continuous films of f.o.c. Cu consisted of about equal proportions of (001) and (110) epitaxed grains. Films of Ni epitaxed (001) at T S > 525 K. At T S ≈ 300 K they consisted of similar proportions of (001) and (110) epitaxed grains and at T S ≈ 93 K only of (110) grains. In Ni films the two (110) domains were characterized by high concentrations of stacking faults (rather than twins) exclusively parallel to (...