Nanoscale thermal transport

作者：David G. Cahill, Wayne K. Ford, Kenneth E. Goodson, Gerald Dennis Mahan, Arun K. Majumdar, Humphrey J. Maris, Roberto D. Merlin, Simon R. Phillpot · 发表于：Journal of Applied Physics · 年份：2003 · DOI：10.1063/1.1524305 · 被引用次数：3220 · 研究领域：Thermal properties of materials、Thermal Radiation and Cooling Technologies、Advanced Thermoelectric Materials and Devices

Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equ...