In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN

作者：Daniel Gall, Richard T. Haasch, Nancy Finnegan, Taeyoon Lee, C.-S. Shin, Ernie Sammann, J. E. Greene, Ivan Petrov · 发表于：Surface Science Spectra · 年份：2000 · DOI：10.1116/1.1360984 · 被引用次数：31 · 研究领域：Electron and X-Ray Spectroscopy Techniques、Semiconductor materials and devices、Metal and Thin Film Mechanics

X-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron spectroscopy (AES) spectra are presented from epitaxial, single-crystal transition-metal (TM) nitride (ScN, TiN, VN, and CrN) layers, that were grown in situ in an ultrahigh-vacuum (UHV) magnetron sputter deposition system attached to the analysis chambers. The samples are near-stoichiometric with N/Me ratios determined by Rutherford backscattering spectroscopy (RBS), and contain no bulk or surface impurities detectable by XPS, AES, or RBS. The spectra therefore represent reliable reference data. We also present XPS and AES data from sputter-etched samples in order to quantitatively determine the effect of preferential sputtering of nitrogen in TM nitrides. The sputter etching was performed under conditions typical for sputter cleaning of air-exposed samples until a steady state N/Me ratio is reached.