Statistical Properties of Disordered Semiconductors

作者：DAVID A. REDFIELD · 发表于：Physical Review Letters · 年份：1971 · DOI：10.1103/physrevlett.27.730 · 被引用次数：31 · 研究领域：Glass properties and applications、Theoretical and Computational Physics、Material Dynamics and Properties

Basic statistical considerations are shown to imply pronounced effects on many properties of materials having energy-band tails. For extrinsic cases a metallike temperture dependence of the Fermi energy occurs; in consequence, a method is proposed for directly measuring the density of states in the tail. For intrinsic amorphous semiconductors, severe limitations are found for the inference of a sharp mobility edge from temperature-dependent conductivity data.