Optically pumped lasing of ZnO at room temperature

作者：Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, S. Koyama, Mengyan Shen, Toru Goto · 发表于：Applied Physics Letters · 年份：1997 · DOI：10.1063/1.118824 · 被引用次数：2195 · 研究领域：ZnO doping and properties、GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices

We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.