Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene

作者：Matthew J. Hollander, Michael Labella, Zachary R. Hughes, Michael Zhu, Kathleen A. Trumbull, Randal L. Cavalero, David W. Snyder, Xiaojun Wang, Euichul Hwang, Suman Datta, Joshua A. Robinson · 发表于：Nano Letters · 年份：2011 · DOI：10.1021/nl201358y · 被引用次数：112 · 研究领域：Graphene research and applications、Semiconductor materials and devices、Advanced Memory and Neural Computing

We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.