High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers

作者：Tawee Tanbun-Ek, Ralph A. Logan, N.A. Olsson, Henryk Temkin, A. Michael Sergent, K. W. Wecht · 发表于：Applied Physics Letters · 年份：1990 · DOI：10.1063/1.103722 · 被引用次数：53 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Photonic and Optical Devices

A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 μm is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 μm and a facet reflectivity of ∼5 and 85% for the front and the rear facets, respectively. The laser has a threshold of 30 mA and a slope efficiency as high as 0.4 mW/mA.